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SO-8.pngNRND = Not Recommended for New Design
30V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 20 |
| CISS Typ (pF) | 2748 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 13 |
| PD @TA = +25°C (W) | 2.5 |
| Polarity | P |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 10V (nC) | 60.4 |
| QG Typ @ |VGS| = 4.5V (nC) | 30 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(10V)(mΩ) | 11 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 17 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 2 |
