450V P-CHANNEL ENHANCEMENT MODE MOSFET
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This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 450 V |
| |VGS| (±V) | 30 ±V |
| |IDS| @TC = +25°C (A) | 0.25 |
| PD @TC = +25°C (W) | 13.9 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 150000 mΩ |
| |VGS(TH)| Max (V) | 4 V |
| QG Typ @ |VGS| = 10V (nC) | 1.8 nC |
| CISS Typ (pF) | 59.2 pF |
| CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
