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DMPH6051SFVW

60V 175°C P-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low R_DS(ON)— Ensures Minimal On-State Losses
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	20.6
P_D @T_A = +25°C (W)	3.2
P_D @T_C = +25°C (W)	51
R_DS(ON)Max@ V_GS(10V)(mΩ)	60 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	80 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	17 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	36 nC
C_ISS Typ (pF)	2087 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMPH6051SFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf