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DMT15H017LPSW

150V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • <1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Synchronous Rectification
  • Power Switching
  • Class D Audio Amplifier

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 9.4
|IDS| @TC = +25°C (A) 58
PD @TA = +25°C (W) 2.3
PD @TC = +25°C (W) 89
RDS(ON)Max@ VGS(10V)(mΩ) 17.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 25.5 mΩ
|VGS(TH)| Max (V) 2.6 V
QG Typ @ |VGS| = 10V (nC) 50 nC
CISS Typ (pF) 3369 pF
CISS Condition @|VDS| (V) 75 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC