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DMT30M9LPS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching—Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High-Conversion Efficiency
Low RDS(ON)—Minimizes On-State Losses
<1.1mm Package Profile—Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

Engine Management Systems
Body Control Electronics
DC-DC Converters
Synchronous Rectification

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	100
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	1.1
R_DS(ON)Max@ V_GS(10V)(mΩ)	1 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	1.6 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	71.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	160.5 nC
C_ISS Typ (pF)	12121 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMT30M9LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile