Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png
Back to MOSFET Master Table

DMTH10H015SPS

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in: motor controls, DC-DC converters, and power management.

Feature(s)

  • Rated to +175C—Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • Thermally Efficient Package—Cooler Running Applications
  • Low RDS(ON)—Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (DMTH10H015SPSQ)

Application(s)

  • Motor controls
  • DC-DC converters
  • Power managements

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 56
PD @TA = +25°C (W) 2.7
PD @TC = +25°C (W) 94
RDS(ON)Max@ VGS(10V)(mΩ) 14.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 19.5 (@6V) mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 30.1 nC
CISS Typ (pF) 2343 pF
CISS Condition @|VDS| (V) 50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf