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DMTH10H1M7STLW

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8

Datasheet

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Motor Control
DC-DC Converters
Power Management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	250
P_D @T_A = +25°C (W)	6
P_D @T_C = +25°C (W)	250
R_DS(ON)Max@ V_GS(10V)(mΩ)	2 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	147 nC
C_ISS Typ (pF)	9871 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H1M7STLW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile