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PowerDI5060-8.png30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
- Backlighting
- Power Management Functions
- DC-DC Converters
- Low RDS(ON) – Minimizes On-State Losses
- Excellent Qgd x RDS(ON) Product (FOM)
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- 100% Unclamped Inductive Switching – Ensures More Reliability
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
- Backlighting
- Power Management Functions
- DC-DC Converters
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20, 16 ±V |
| |IDS| @TA = +25°C (A) | 22 |
| |IDS| @TC = +25°C (A) | 145 |
| PD @TC = +25°C (W) | 136 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3.8 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 6 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 10V (nC) | 43.7 nC |
| CISS Typ (pF) | 2370 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |
