Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMTH6004SPS

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low Qg – Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH6004SPSQ)

Application(s)

  • DC motor controls
  • Synchronous rectifications
  • DC/DC converters

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive Supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 25
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 2.1
PD @TC = +25°C (W) 167
RDS(ON)Max@ VGS(10V)(mΩ) 3.1 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 95.4 nC
CISS Typ (pF) 4556 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity