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DXTN10060DFJBWQ

NPN, 60V, 4A, DFN2020-3 (SWP)

Datasheet

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Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The W-DFN2020-3/SWP
(Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.

Feature(s)

BVCEO > 60V
IC = 4A Continuous Collector Current
Low Saturation Voltage (100mV Max @1A)
RSAT = 60mΩ for a Low Equivalent On-Resistance
hFE Specified up to 6A for High Current Gain Hold Up
Tighter Gain Specification
Low Profile 0.62mm High Package for Thin Applications
Sidewall Tin Plating for Wettable Flanks in AOI
RθJA Efficient, 60% Lower than SOT23
4mm2 Footprint, 50% Smaller Than SOT23
Rated +175°C – Ideal for High Temperature Environment
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DXTN10060DFJBWQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

Automotive Systems
- MOSFET Gate Driving
- DC-DC Converters
- Motor Control
- Power Switches

Product Specifications

Product Parameters

Category	Low Saturation Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	NPN
VCEO, VCES (V)	60
IC (A)	4
ICM (A)	6
PD (W)	1.8
hFE (Min)	340
hFE (@ IC) (A)	0.2
h_FE(Min 2)	140
hFE (@ IC2) (A)	2
VCE(sat) Max (mV)	20
V_CE(SAT) (@ IC/IB) (A/mA)	0.1/10
VCE(sat) (Max.2) (mV)	200
VCE(sat) (@ IC/IB2) (A/mA)	2/50
fT (MHz)	125
RCE(sat) (mΩ)	60

Technical Documents

SPICE Model

DXTN10060DFJBWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile