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S12M15600B(LS)

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Feature(s)

  • Blocking Voltage to 600 Volts
  • On-State Current Rating of 12 Amperes RMS at 80°C
  • Rugged, Economical TO-220AB Package
  • Glass Passivated Junctions for Reliability and Uniformity
  • Minimum and Maximum Values of IGT, VGT and IH Specified
    for Ease of Design
  • High Immunity to dv/dt – 100V/ms Minimum at 125°C
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified No
Configuration Uni-Directional
Type SCR
Peak Repetitive Off-State VoltageVDRM / RRM (V) 600 V
On-State RMS Current(RMS)IT(RMS) (A) 12 A
Peak On-State Voltage MaxVTM Max(V) 2.2 V
Gate Trigger Current MaxIGT MAX (mA) 15 mA
Peak Repetitive Forward Current MaxIDRM Max (uA) 10 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A) 120 A
Holding Current MaxIH Max (mA) 40 mA
Junction TemperatureTJ Max (°C) 125

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf