Diodes Incorporated — Analog and discrete power solutions
U WLB1515 9

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DMP2101UCB9 (Obsolete)

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • LD-MOS Technology with the Lowest Figure of Merit:
    • RD1D2(ON) = 63mΩ to Minimize On-State Losses
    • Qg = 3.2nC for Ultra-Fast Switching
  • VGS(TH) = -0.74V Typ. for a Low Turn-On Potential
  • CSP with Footprint 1.5mm × 1.5mm
  • Height = 0.62mm for Low Profile
  • Gate ESD Protection <HBM Class 3A>
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Battery Management 
  • Load Switch 
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 10
CISS Typ (pF) 392
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 3.2
PD @TA = +25°C (W) 1.56
Polarity P+P
QG Typ @ |VGS| = 4.5V (nC) 3.2
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) 175
RDS(ON)Max@ VGS(2.5V)(mΩ) 130
RDS(ON)Max@ VGS(4.5V)(mΩ) 100
|VDS| (V) 20
|VGS| (±V) 6
|VGS(TH)| Max (V) 0.9
|VGS(TH)| Min (V) 0.4

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)