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DMTH6004LPSWQ

60V +175°C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: primary switches in isolated DC-DC, synchronous rectifiers, and load switches.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low Qg – Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH6004LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Primary switches in isolated DC-DC
  • Synchronous rectifiers
  • Load switches

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 2.6
PD @TC = +25°C (W) 138
RDS(ON)Max@ VGS(10V)(mΩ) 3.1 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 78.3 nC
CISS Typ (pF) 5399 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf