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DXTN10060DFJBQ

NPN, 60V, 4A, DFN2020-3

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Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.

Feature(s)

  • BVCEO > 60V
  • IC = 4A Continuous Collector Current
  • Low Saturation Voltage (100mV Max @1A)
  • RSAT = 60mΩ for a Low Equivalent On-Resistance
  • hFE Specified up to 6A for High Current Gain Hold Up
  • Tighter Gain Specification
  • Low Profile 0.6mm High Package for Thin Applications
  • RθJA Efficient, 60% Lower than SOT23
  • 4mm2 Footprint, 50% Smaller than SOT23
  • Rated +175°C – Ideal for High Temperature Environment
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DXTN10060DFJBQ is suitable for automotive applications requiring specific change control and is AEC-Q101
    qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

  • Automotive Systems
    • MOSFET Gate Driving
    • DC-DC Converters
    • Motor Control
    • Power Switches

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 60
IC (A) 4
ICM (A) 6
PD (W) 1.8
hFE (Min) 340
hFE (@ IC) (A) 0.2
hFE(Min 2) 140
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 20
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 200
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 125
RCE(sat) (mΩ) 60

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC