1N4448HWS

switching diode

Datasheet

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Feature(s)

Fast Switching Speed
Small Surface-Mount Package
For General-Purpose Switching Applications
High Conductance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The 1N4448HWSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive supports PPAP)	Standard
Configuration	Single
Polarity	Anode, Cathode
Power Rating(mW)	200 mW
ESD Diodes (Y\|N)	No
Peak RepetitiveReverse VoltageV_RRM(V)	80 V
Reverse RecoveryTime trr (ns)	4 ns
Maximum Average Rectifier Current I_{O (mA)}	250 mA
Maximum Peak Forward Surge Current I_{FSM (A)}	4 A
Forward Voltage Drop V_F @ I_{F (mA)}	1 mA
Maximum ReverseCurrent I_R(µA)	0.1 µA
TotalCapacitance C_T(pF)	3.5 pF
V(BR)R (V) Min @IR=100μA	80
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω	4
Maximum Reverse Current I_R @ V_{R (V)}	80 V
VF(V) Max @ IF=1.0mA	0.715
VF(V) Max @ IF=10mA	0.855
CT(pF) Max @ VR = 0V, f = 1MHz	3.5

Technical Documents

SPICE Model

1N4448HWS.spice.txt

MDS Reports

1N4448HWS-Green-DC-0832.pdf (20 KB)

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2690	2024-05-29	2024-08-29	Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2456	2020-05-29	2020-08-29	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.
PCN-2461	2020-05-08	2021-04-05	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315	2018-03-09	2018-06-09	Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility