Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOD123-3D-image.pngswitching diode
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| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| Polarity | Anode, Cathode |
| Power Rating(mW) | 400 mW |
| ESD Diodes (Y|N) | No |
| Peak RepetitiveReverse VoltageVRRM (V) | 75 V |
| Reverse RecoveryTime trr (ns) | 4 ns |
| Maximum Average Rectifier Current IO (mA) | 250 mA |
| Maximum Peak Forward Surge Current IFSM (A) | 4 A |
| Forward Voltage Drop VF @ IF (mA) | 1 mA |
| Maximum ReverseCurrent IR (µA) | 2.5 µA |
| TotalCapacitance CT (pF) | 4 pF |
| VF(V) Max @ IF=100mA | 1 |
| V(BR)R (V) Min @IR=100μA | 75 |
| Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω | 4 |
| Maximum Reverse Current IR @ VR (V) | 75 V |
| CT(pF) Max @ VR = 0V, f = 1MHz | 4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
| PCN-2315 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility |
