Diodes Incorporated — Analog and discrete power solutions
SOD123 3D image

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOD123-3D-image.png
Back to Schottky (.5A and Above)

1N5819HW

Schottky

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

The device is a single rectifier offering low VF and excellent high temperature stability. This device is ideal for use in general rectification applications: for use in low-voltage, high-frequency inverters, free wheeling, polarity protection applications.

Feature(s)

  • High Surge Capability
  • Low Power Loss, High Efficiency
  • High Current Capability and Low Forward Voltage Drop
  • Guard Ring Die Construction for Transient Protection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (1N5819HWQ)

Application(s)

  • For use in low-voltage, high-frequency inverters
  • Free wheeling
  • Polarity protection applications

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
MaximumAverageRectifiedCurrent IO (A) 1 A
@ TerminalTemperature TT (ºC) 90 ºC
Peak RepetitiveReverse VoltageVRRM (V) 40 V
Peak ForwardSurge CurrentIFSM(A) 25 A
Forward VoltageDrop VF(V) 0.45 V
@ IF (A) 1 A
Maximum ReverseCurrent IR (µA) 1000 µA
@ VR (V) 40 V
TotalCapacitance CT (pF) 50 pF

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2562 2022-01-04 2022-04-04 Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2459 2020-05-28 2020-11-28 Device End of Life (EOL)