N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.115 |
| PD @TA = +25°C (W) | 0.15 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 13500 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 7500 @5V mΩ |
| |VGS(TH)| Max (V) | 2 V |
| CISS Typ (pF) | 22 pF |
| CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |
