Schottky
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AEC Qualified | Yes |
---|---|
Compliance (Only Automotive supports PPAP) | Standard |
Configuration | Single |
MaximumAverageRectifiedCurrent IO (A) | 0.5 A |
@ TerminalTemperature TT (ºC) | N/A ºC |
Peak RepetitiveReverse VoltageVRRM (V) | 30 V |
Peak ForwardSurge CurrentIFSM(A) | 5.5 A |
Forward VoltageDrop VF(V) | 0.43 V |
@ IF (A) | 0.5 A |
Maximum ReverseCurrent IR (µA) | 130 µA |
@ VR (V) | 30 V |
TotalCapacitance CT (pF) | 170 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
PCN-2623 | 2023-05-15 | 2023-11-15 | Device End of Life (EOL) |
PCN-2562 | 2022-01-04 | 2022-04-04 | Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products |
PCN-2477 | 2020-08-17 | 2021-05-09 | Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi |
PCN-2459 | 2020-05-28 | 2020-11-28 | Device End of Life (EOL) |