Schottky
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The 70mA surface-mount Schottky Barrier Diode in SOT23 package, offers low-forward voltage drop and fast switching capability, designed with PN Junction Guard Ring for Transient and ESD Protection.
AEC Qualified | Yes |
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Compliance (Only Automotive supports PPAP) | Standard |
Configuration | Single |
Power Rating(mW) | 200 mW |
Peak RepetitiveReverse VoltageVRRM (V) | 70 V |
Forward Continuous Current IFM (mA) | 70 mA |
Forward VoltageDrop VF(V) | 0.41 |
@ IF(mA) | 1 mA |
Maximum ReverseCurrent IR (µA) | 0.1 µA |
@ VR (V) | 50 V |
Capacitance CTOT Typ (pF) | 2 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
PCN-2562 | 2022-01-04 | 2022-04-04 | Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products |
PCN-2550 | 2021-12-20 | 2022-06-20 | Device End of Life (EOL) |
PCN-2477 | 2020-08-17 | 2021-05-09 | Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi |
PCN-2478 | 2020-08-13 | 2021-06-06 | Additional Wafer Source (GFAB) |
PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
PCN-2459 | 2020-05-28 | 2020-11-28 | Device End of Life (EOL) |
PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |