Diodes Incorporated — Analog and discrete power solutions
SOT363

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SOT363.png
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BAV199DW

switching diode

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Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Dual-Dual, Series (Alt.)
Polarity Anode, Cathode
Power Rating(mW) 200 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 85 V
Reverse RecoveryTime trr (ns) 3000 ns
Maximum Average Rectifier Current IO (mA) 160 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 1.1 mA
Maximum ReverseCurrent IR (µA) 0.005 µA
TotalCapacitance CT (pF) 2 pF
V(BR)R (V) Min @IR=100μA 85
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 3000
Maximum Reverse Current IR @ VR (V) 75 V
VF(V) Max @ IF=1.0mA 0.715
VF(V) Max @ IF=10mA 0.855
IR(uA) Max @ VR=80V 5nA@75V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2584 2022-05-19 2022-11-19 Device End of Life (EOL)
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility