Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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BAV99BRLP (Obsolete)

Switching Diode

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Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
Configuration Dual-Dual, Series (Alt.)
CT(pF) Max @ VR = 0V, f = 1MHz 2
ESD Diodes (Y|N) No
Forward Voltage Drop VF @ IF (mA) 50, 1
IR(nA) Max @ VR=5V 10
IR(µA) Max @ VR=30V 0.1
IR(uA) Max @ VR=80V 2.5uA@75V
Maximum Average Rectifier Current IO (mA) 300
Maximum Peak Forward Surge Current IFSM (A) 3
Maximum ReverseCurrent IR (µA) 2.5
Maximum Reverse Current IR @ VR (V) 75
Peak RepetitiveReverse VoltageVRRM (V) 75
Polarity Anode, Cathode
Power Rating(mW) 500
AEC Qualified Yes
Reverse RecoveryTime trr (ns) 4
TotalCapacitance CT (pF) 2
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
V(BR)R (V) Min @IR=100μA 75@2.5μA
V(BR)R (V) Min (µA) 75@2.5μA
VF(V) Max @ IF=1.0mA 0.7
VF(V) Max @ IF=100mA 1.2
VF(V) Max @ IF=10mA 0.82

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility