Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT23.pngN-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.25 |
| PD @TA = +25°C (W) | 0.3 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 5000 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| CISS Typ (pF) | 22 @ 10V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
