N-CHANNEL ENHANCEMENT MODE MOSFET
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These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low- voltage, low-current applications such as:
https://www.diodes.com/quality/product-definitions/
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.17 |
PD @TA = +25°C (W) | 0.3 |
RDS(ON)Max@ VGS(10V)(mΩ) | 6000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 10000 mΩ |
|VGS(TH)| Max (V) | 2 V |
CISS Typ (pF) | 22 @ 25V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
PCN-2561 | 2022-02-17 | 2022-08-17 | Device End of Life (EOL) |
PCN-2484 | 2020-11-04 | 2021-02-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Standardization of Assembly Bill of Materials At The Existing CAT Site for Select Discrete Products |
PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |