Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT23.pngN-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.23 |
| PD @TA = +25°C (W) | 0.7 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 6000 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 10000 mΩ |
| |VGS(TH)| Max (V) | 2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.7 nC |
| QG Typ @ |VGS| = 10V (nC) | 1.3 nC |
| CISS Typ (pF) | 38 pF |
| CISS Condition @|VDS| (V) | 50 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
