DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 50 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.2 |
| PD @TA = +25°C (W) | 0.2 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3500 mΩ |
| |VGS(TH)| Max (V) | 1.5 V |
| CISS Typ (pF) | 50 @ 10V (max) pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2561 | 2022-02-17 | 2022-08-17 | Device End of Life (EOL) |
| PCN-2498 | 2021-04-07 | 2021-04-07 | Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products |
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
