Diodes Incorporated — Analog and discrete power solutions
SOT363

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BSS138DWK

50V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.31
PD @TA = +25°C (W) 0.49
RDS(ON)Max@ VGS(10V)(mΩ) 2600 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3200 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 5200 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.4 nC
QG Typ @ |VGS| = 10V (nC) 0.8 nC
CISS Typ (pF) 22 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf