HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8
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The DGD2190M is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2190M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.
The DGD2190M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.
The DGD2190M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
Compliance (Only Automotive(Q) supports PPAP) | Standard |
---|---|
Offset Voltage Max (V) | 600 V |
Inputs | HIN, LIN |
Output Current IO+ (Typ) (mA) | 4500 mA |
Output Current IO- (Typ) (mA) | 4500 mA |
tON (Typ) (ns) | 140 ns |
tOFF (Typ) (ns) | 140 ns |
tR (Typ) (ns) | 25 ns |
tF (Typ) (ns) | 20 ns |