650V FIELD STOP IGBT IN TO247
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The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.
Anti Parallel Diode | Yes |
---|---|
EOFF typ @ +25°C (mJ) | 0.4 |
EON typ @ +25°C (mJ) | 0.5 |
IC @ +100°C (A) | 40 |
IC @ +25°C (A) | 80 |
Power Dissipation @ TC = +25°C (W) | 230 |
Short Circuit (µs) | N/A |
VCE(sat) max @ +25°C (V) | 2.3 |
VCE(sat) typ @ +25°C (V) | 1.8 |
VCES (V) | 650 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2561 | 2022-02-17 | 2022-08-17 | Device End of Life (EOL) |