Diodes Incorporated — Analog and discrete power solutions
TO247

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DGTD65T40S2PT (Obsolete)

650V FIELD STOP IGBT IN TO247

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Description

The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.

Feature(s)

  • High Speed Switching & Low Power Loss
  • VCE(sat) = 1.8V @ IC = 40A
  • trr = 60ns (typ) @ diF/dt = 820A/µs
  • Eoff = 0.4mJ @ TC=25°C
  • Maximum Junction Temperature +175°C

Application(s)

  • UPS
  • Welder
  • Solar Inverter
  • IH Cooker

Product Specifications

Product Parameters

Anti Parallel Diode Yes
EOFF typ @ +25°C (mJ) 0.4
EON typ @ +25°C (mJ) 0.5
IC @ +100°C (A) 40
IC @ +25°C (A) 80
Power Dissipation @ TC = +25°C (W) 230
Short Circuit (µs) N/A
VCE(sat) max @ +25°C (V) 2.3
VCE(sat) typ @ +25°C (V) 1.8
VCES (V) 650

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)