ULTRA LOW LEAKAGE SURFACE MOUNT FAST SWITCHING DIODE
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| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| Polarity | Unidirectional |
| Power Rating(mW) | 350 mW |
| ESD Diodes (Y|N) | No |
| Peak RepetitiveReverse VoltageVRRM (V) | 80 V |
| Reverse RecoveryTime trr (ns) | 4 ns |
| Maximum Average Rectifier Current IO (mA) | 100 mA |
| Maximum Peak Forward Surge Current IFSM (A) | 2 A |
| Forward Voltage Drop VF @ IF (mA) | 0.62, 0.74, 0.94 mA |
| Maximum ReverseCurrent IR (µA) | 0.01, 0.1, 0.2 µA |
| TotalCapacitance CT (pF) | 0.5 pF |
| VF(V) Max @ IF=100mA | 1 |
| V(BR)R (V) Min @IR=100μA | 80 |
| Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω | 4 |
| Maximum Reverse Current IR @ VR (V) | 80 V |
| VF(V) Max @ IF=10mA | 0.855 |
| IR(uA) Max @ VR=80V | 0.2 |
| CT(pF) Max @ VR = 0V, f = 1MHz | 2.5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
| PCN-2315 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility |
