COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20, 20 V |
|VGS| (±V) | 8, 8 ±V |
|IDS| @TA = +25°C (A) | 0.455, 0.328 |
PD @TA = +25°C (W) | 0.3 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 990, 1900 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 1200, 2400 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 1800, 3400 mΩ |
|VGS(TH)| Min (V) | 1800, 3400 V |
|VGS(TH)| Max (V) | 1, 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.41, 0.4 nC |
CISS Typ (pF) | 31, 28.5 pF |
CISS Condition @|VDS| (V) | 10, 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2498 | 2021-04-07 | 2021-04-07 | Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products |