Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT563.pngCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20, 20 V |
| |VGS| (±V) | 12, 8 ±V |
| |IDS| @TA = +25°C (A) | 1.03, 0.7 |
| PD @TA = +25°C (W) | 1 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 500, 1000 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 700, 1500 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 900, 2000 mΩ |
| |VGS(TH)| Min (V) | 0.5, 0.5 V |
| |VGS(TH)| Max (V) | 0.9, 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.5, 0.5 nC |
| CISS Typ (pF) | 37, 46 pF |
| CISS Condition @|VDS| (V) | 10, 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
