COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 25, 30 V |
|VGS| (±V) | 8, 12 ±V |
|IDS| @TA = +25°C (A) | 0.4, 2.6 |
PD @TA = +25°C (W) | 1.2 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 4000, 125 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 300 mΩ |
|VGS(TH)| Min (V) | 0.65, 0.5 V |
|VGS(TH)| Max (V) | 1.5, 1.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.4, 10 nC |
QG Typ @ |VGS| = 10V (nC) | 0.7 (@ 8V), 21 (@ -10V) nC |
CISS Typ (pF) | 26.2, 854 pF |
CISS Condition @|VDS| (V) | 10, 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |