Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMC2990UDJ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 20, 20 V
|VGS| (±V) 8, 8 ±V
|IDS| @TA = +25°C (A) 0.45, 0.31
PD @TA = +25°C (W) 0.35
RDS(ON)Max@ VGS(4.5V)(mΩ) 990, 1900 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 1200, 2400 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 1800, 3400 mΩ
|VGS(TH)| Min (V) 0.4, 0.4 V
|VGS(TH)| Max (V) 1, 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.5, 0.4 nC
CISS Typ (pF) 27.6, 28.7 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2582 2022-05-17 2022-08-17 Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH)