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DMC3016LNS

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET

Application(s)

Power Management Functions
Analog Switch

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30, 30 V
\|V_GS\| (±V)	20, 20 ±V
\|I_DS\| @T_A = +25°C (A)	9, 6.8
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(10V)(mΩ)	16, 28 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	20, 38 mΩ
\|V_GS(TH)\| Max (V)	2, 2.4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	9.5, 9.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	21, 19.7 nC
C_ISS Typ (pF)	1184, 1188 pF
C_ISS Condition @\|V_DS\| (V)	15, 15 V

Technical Documents

SPICE Model

DMC3016LNS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.