Complementary Pair Enhancement Mode MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30, 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 6.5, 6.2 |
PD @TA = +25°C (W) | 1.6 |
RDS(ON)Max@ VGS(10V)(mΩ) | 25, 28 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 29, 38 mΩ |
|VGS(TH)| Min (V) | 1 V |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 6, 10.9 nC |
QG Typ @ |VGS| = 10V (nC) | 13.2 nC |
CISS Typ (pF) | 14.6, 17 pF |
CISS Condition @|VDS| (V) | 15 V |