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DMC3400SDW

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor control
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30, 30 V
\|V_GS\| (±V)	20, 20 ±V
\|I_DS\| @T_A = +25°C (A)	0.65, 0.45
P_D @T_A = +25°C (W)	0.39
R_DS(ON)Max@ V_GS(10V)(mΩ)	400, 900 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	700, 1700 mΩ
\|V_GS(TH)\| Max (V)	1.6, 2.6 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.6, 0.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.4, 1.3 nC
C_ISS Typ (pF)	54, 55 pF
C_ISS Condition @\|V_DS\| (V)	15, 15 V

Technical Documents

SPICE Model

DMC3400SDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.