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TSOT26.pngCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 25, 25 V |
| |VGS| (±V) | 8, 8 ±V |
| |IDS| @TA = +25°C (A) | 0.68, 0.46 |
| PD @TA = +25°C (W) | 0.9 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 450, 1100 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 600, 1500 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 730, 2200 mΩ |
| |VGS(TH)| Min (V) | 0.45, 0.5 V |
| |VGS(TH)| Max (V) | 1.1, 1.1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.64, 1.1 nC |
| CISS Typ (pF) | 50, 63 pF |
| CISS Condition @|VDS| (V) | 10, 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
