Diodes Incorporated — Analog and discrete power solutions
SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363

SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363

SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT363

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DMC62D3SDWQ

60V Complementary Pair Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power-management functions.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMC62D3SDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor control
  • Power-management functions

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive Supports PPAP) Automotive
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 60, 60 V
|VGS| (±V) 20, 20 ±V
|IDS| @TA = +25°C (A) 372, 178
PD @TA = +25°C (W) 0.45
RDS(ON)Max@ VGS(10V)(mΩ) 1700, NA mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3000(@ 4.5V), 8000(@ 5V) mΩ
|VGS(TH)| Min (V) 1, 0.8 V
|VGS(TH)| Max (V) 2.5, 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 0.51, 0.6(@ 5V) nC
QG Typ @ |VGS| = 10V (nC) 1.04, NA nC
CISS Typ (pF) 41, 42 pF
CISS Condition @|VDS| (V) 30, 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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