Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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DMC67D8UFDBQ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

• Low On-Resistance
• Low Input Capacitance
• Low Profile, 0.6mm Maximum Height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)

Application(s)

• Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 60, 20 V
|VGS| (±V) 20, 12 ±V
|IDS| @TA = +25°C (A) 0.39, 2.9
PD @TA = +25°C (W) 0.89
RDS(ON)Max@ VGS(10V)(mΩ) 4000, mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 4100, 72 mΩ
|VGS(TH)| Max (V) 2.5, 1.25 V
QG Typ @ |VGS| = 4.5V (nC) 0.4,7.3 nC
CISS Typ (pF) 41, 443 pF
CISS Condition @|VDS| (V) 25,16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC