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DMG3401LSN

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 30V P-Channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

Motor Control

Backlighting

DC-DC Converters

Power management functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	3.7
P_D @T_A = +25°C (W)	1.2
R_DS(ON)Max@ V_GS(10V)(mΩ)	50 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	60 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	85 mΩ
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	11.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	25.1 nC
C_ISS Typ (pF)	1326 pF

Technical Documents

SPICE Model

DMG3401LSN.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products