30V P-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new-generation small-signal enhancement-mode MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 3.7 |
PD @TA = +25°C (W) | 1.2 |
RDS(ON)Max@ VGS(10V)(mΩ) | 50 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 60 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 85 mΩ |
|VGS(TH)| Max (V) | 1.3 V |
QG Typ @ |VGS| = 4.5V (nC) | 11.6 nC |
QG Typ @ |VGS| = 10V (nC) | 25.1 nC |
CISS Typ (pF) | 1326 pF |
CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |