N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 354 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 0.7 |
| |IDS| @TC = +25°C (A) | 2.8 |
| PD @TA = +25°C (W) | 2.5 |
| PD @TC = +25°C (W) | 41 |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 12.6 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3500 |
| |VDS| (V) | 600 |
| |VGS| (±V) | 30 |
| |VGS(TH)| Max (V) | 4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
| PCN-2475 | 2020-08-06 | 2020-11-06 | Qualification of Assembly & Test Site Transfer for Select Discrete Products |
