DMG3N60SJ3 (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	10
C_ISS Typ (pF)	354
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	0.7
\|I_DS\| @T_C = +25°C (A)	2.8
P_D @T_A = +25°C (W)	2.5
P_D @T_C = +25°C (W)	41
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	12.6
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	3500
\|V_DS\| (V)	600
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	4

Technical Documents

SPICE Model

DMG3N60SJ3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2533	2021-09-02	2022-03-02	Device End of Life (EOL)
PCN-2475	2020-08-06	2020-11-06	Qualification of Assembly & Test Site Transfer for Select Discrete Products