Diodes Incorporated — Analog and discrete power solutions
SO 8

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DMG4407SSS (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V P channel enhancement mode MOSFET

  • Low RDS(ON) - minimizes conduction losses diode switching losses
  • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
  • Avalanche rugged – IAR and EAR rated

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) N/A
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 12.5
PD @TA = +25°C (W) 1.45
Polarity P
QG Typ @ |VGS| = 10V (nC) 41
QG Typ @ |VGS| = 4.5V (nC) 20.5
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 3
RDS(ON)Max@ VGS(10V)(mΩ) 13
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 14
|VDS| (V) 30
|VGS| (±V) 25
|VGS(TH)| Max (V) 3

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life