Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

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DMG4511SK4

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This new generation 35V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and Inverter and other power management functions.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 35, 35 V
|VGS| (±V) 20, 20 ±V
|IDS| @TA = +25°C (A) 13, 12
PD @TA = +25°C (W) 4.1
RDS(ON)Max@ VGS(10V)(mΩ) 35, 45 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 65, 65 mΩ
|VGS(TH)| Max (V) 3, 3 V
QG Typ @ |VGS| = 4.5V (nC) 8.8, 9.5 nC
QG Typ @ |VGS| = 10V (nC) 18.7, 19.2 nC
CISS Typ (pF) 850, 985 pF
CISS Condition @|VDS| (V) 25, 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC