COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation 35V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and Inverter and other power management functions.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 35, 35 V |
|VGS| (±V) | 20, 20 ±V |
|IDS| @TA = +25°C (A) | 13, 12 |
PD @TA = +25°C (W) | 4.1 |
RDS(ON)Max@ VGS(10V)(mΩ) | 35, 45 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 65, 65 mΩ |
|VGS(TH)| Max (V) | 3, 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 8.8, 9.5 nC |
QG Typ @ |VGS| = 10V (nC) | 18.7, 19.2 nC |
CISS Typ (pF) | 850, 985 pF |
CISS Condition @|VDS| (V) | 25, 25 V |