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DIODES has been fabricated using an advanced high voltage MOSFET process , This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
| Compliance (Only Automotive supports PPAP) | No |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 4 |
| |IDS| @TC = +25°C (A) | N/A |
| PD @TA = +25°C (W) | 2.19 |
| PD @TC = +25°C (W) | N/A |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 13.5 |
| QG Typ @ |VGS| = 4.5V (nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3000 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | N/A |
| |VDS| (V) | 650 |
| |VGS| (±V) | 30 |
| |VGS(TH)| Max (V) | 5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
