Diodes Incorporated — Analog and discrete power solutions
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DMG5802LFX

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N+N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 24 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 6.5
    PD @TA = +25°C (W) 0.98
    RDS(ON)Max@ VGS(4.5V)(mΩ) 15 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 20 mΩ
    |VGS(TH)| Max (V) 1.5 V
    QG Typ @ |VGS| = 4.5V (nC) 14.5 nC
    QG Typ @ |VGS| = 10V (nC) 31.3 nC
    CISS Typ (pF) 1080 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC