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TSOT26.pngCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30, 30 V |
| |VGS| (±V) | 12, 12 ±V |
| |IDS| @TA = +25°C (A) | 3.8, 2.5 |
| PD @TA = +25°C (W) | 1.3 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 55, 110 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 65, 142 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 85, 190 mΩ |
| |VGS(TH)| Max (V) | 1.5, 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 5.4, 6.5 nC |
| QG Typ @ |VGS| = 10V (nC) | 12.3, 13.8 nC |
| CISS Typ (pF) | 422, 541 pF |
| CISS Condition @|VDS| (V) | 15, 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
