Diodes Incorporated — Analog and discrete power solutions
SO 8

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Dual P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P+P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 4.6
PD @TA = +25°C (W) 1.2
RDS(ON)Max@ VGS(4.5V)(mΩ) 75 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 110 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 6.5 nC
CISS Typ (pF) 608.4 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.