40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
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AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | 2N2P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 40 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 4.5, 3.7 |
PD @TA = +25°C (W) | 1.5 |
RDS(ON)Max@ VGS(10V)(mΩ) | 45, 65 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 58, 100 mΩ |
|VGS(TH)| Min (V) | 1, 1 V |
|VGS(TH)| Max (V) | 3, 3 V |
QG Typ @ |VGS| = 10V (nC) | 12.5, 11.1 nC |
CISS Typ (pF) | 574, 587 pF |
CISS Condition @|VDS| (V) | 20, 20 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |